1. product profile 1.1 general description planar pin diode in a sod323 very small plastic smd package. 1.2 features and benefits ? high voltage, current controlled ? rf resistor for rf attenuators and switches ? low diode capacitance ? low diode forward resistance ? low series inductance ? for applications up to 3 ghz ? aec-q101 qualified 1.3 applications ? rf attenuators and switches 2. pinning information [1] the marking bar indicates the cathode. 3. ordering information bap64-03 silicon pin diode rev. 8 ? 12 may 2015 product data sheet table 1. discrete pinning pin description simplified outline symbol 1 cathode [1] 2 anode v \ p table 2. ordering information type number package name description version bap64-03 - plastic surface mounted package; 2 leads; sod323
bap64-03 all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2015. all rights re served. product data sheet rev. 8 ? 12 may 2015 2 of 9 nxp semiconductors bap64-03 silicon pin diode 4. marking 5. limiting values 6. thermal characteristics 7. characteristics table 3. marking type number marking code bap64-03 a3 table 4. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v r reverse voltage - 175 v i f forward current - 100 ma p tot total power dissipation t sp = 90 ? c- 500mw t stg storage temperature ? 65 +150 ?c t j junction temperature ? 65 +150 ?c table 5. thermal characteristics symbol parameter conditions typ unit r th(j-sp) thermal resistance from junction to solder point 120 k/w table 6. characteristics t j = 25 ? c unless otherwise specified. symbol parameter conditions min typ max unit v f forward voltage i f = 50 ma - 0.95 1.1 v i r reverse current v r = 175 v - - 10 ? a v r =20v - - 1 ? a c d diode capacitance see figure 1 ; f = 1 mhz; v r = 0 v - 0.48 - pf v r = 1 v - 0.35 - pf v r =20v - 0.23 0.35 pf
bap64-03 all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2015. all rights re served. product data sheet rev. 8 ? 12 may 2015 3 of 9 nxp semiconductors bap64-03 silicon pin diode [1] guaranteed on aql basis: inspection level s4, aql 1.0. r d diode forward resistance see figure 2 ; f = 100 mhz; [1] i f =0.5ma - 20 40 ? i f =1ma - 10 20 ? i f =10ma - 2.0 3.8 ? i f = 100 ma - 0.7 1.35 ? ? l charge carrier life time when switched from i f =10ma to i r =6ma; r l = 100 ? ; measured at i r =3ma -1.55- ? s l s series inductance - 1.68 - nh table 6. characteristics ?continued t j = 25 ? c unless otherwise specified. symbol parameter conditions min typ max unit
bap64-03 all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2015. all rights re served. product data sheet rev. 8 ? 12 may 2015 4 of 9 nxp semiconductors bap64-03 silicon pin diode f=1mhz; t j =25 ? c. f = 100 mhz; t j =25 ? c. fig 1. diode capacitance as a function of reverse voltage; typical values fig 2. forward resistance as a function of forward current; typical values t amb =25 ? c diode zero biased and inserted in series with a 50 ? stripline circuit t amb =25 ? c (1) i f =100ma (2) i f =10ma (3) i f =1ma (4) i f =0.5ma diode inserted in series with a 50 ? stripline circuit and biased via the analyzer tee network fig 3. isolation of the diode as a function of frequency; typical values fig 4. insertion loss of the diode as a function of frequency; typical values & g i ) 9 5 9 p f g p f g , ) p $ u ' i * + ] p f g , 6 / g % / l q v g % i * + ] p f g
bap64-03 all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2015. all rights re served. product data sheet rev. 8 ? 12 may 2015 5 of 9 nxp semiconductors bap64-03 silicon pin diode 8. package outline fig 5. package outline sod323 5 ( ) ( 5 ( 1 & |